High-performance polycrystalline silicon thin-film transistors fabricated by high-temperature process with excimer laser annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3293-3296

  Jiroku, Hiroaki ^a   Miyasaka, Mitsutoshi ^a   Inoue, Satoshi ^a   Tsunekawa, Yoshifumi ^a   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Excimer laser annealing; High temperature; Polycrystalline silicon; Solid phase crystallization; Thin film transistor

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIFFUSION; EXCIMER LASERS; HIGH TEMPERATURE EFFECTS; OXIDATION; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EXCIMER LASER ANNEALING (ELA); HIGH-TEMPERATURE; SOLID-PHASE CRYSTALLIZATION (SPC); THIN-FILM TRANSISTORS (TFT);

POLYSILICON;

EID: 4344716957     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3293     Document Type: Article

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