High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5004, Issue , 2003, Pages 28-35

  Jiroku, Hiroaki ^a   Miyasaka, Mitsutoshi ^a   Inoue, Satoshi ^a   Tsunekawa, Yoshifumi ^a   Shimoda, Tatsuya ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Excimer laser annealing; High temperature; Polycrystalline silicon; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; GRAIN BOUNDARIES; OXIDATION; SILICON ON INSULATOR TECHNOLOGY;

LASER ANNEALING;

THIN FILM TRANSISTORS;

EID: 0042861755     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482584     Document Type: Conference Paper

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