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Volumn 54, Issue 3, 1996, Pages 1482-1485

Model-dependent electronic structure of the Si(111)2×1 surface

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Indexed keywords


EID: 0001614138     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.1482     Document Type: Article
Times cited : (17)

References (38)
  • 34
    • 33645898818 scopus 로고
    • In the previous pseudopotential calculation in Ref. 8 (using a smaller plane-wave cutoff energy of 8 Ry) the reverse-buckled PC model appeared to be slightly (0.005 eV) higher in energy than the PC model. The energy difference is even smaller in the present study. This result calls more attention to the reverse-buckled PC model. Since the involved energy difference is too small, however, a decisive conclusion on the energetics would require a systematic examination as to whether the energy difference is affected by the use of different LDA schemes or more careful parametrizations of the correlation energy [see, for example, J. P. Perdew and Y. Wang, Phys. Rev. B 45, 13t244 (1992)].
    • (1992) Phys. Rev. B , vol.45 , pp. 13244
    • Perdew, J.1    Wang, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.