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Volumn 565, Issue 2-3, 2004, Pages 251-258
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Effect of the chemical vapor deposition environment on the faceted surface of α-(0001) sapphire
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Author keywords
Aluminum oxide; Atomic force microscopy, Auger electron spectroscopy; Chemical vapor deposition; Diamond; Etching; Growth; Surface structure, morphology, roughness, and topography
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Indexed keywords
ANNEALING;
ATOMIC FORCE MICROSCOPY;
AUGER ELECTRON SPECTROSCOPY;
CHEMICAL VAPOR DEPOSITION;
DIAMONDS;
ELECTRON MICROSCOPY;
EPITAXIAL GROWTH;
ETCHING;
HARDNESS;
LOW ENERGY ELECTRON DIFFRACTION;
MORPHOLOGY;
SAPPHIRE;
SILICON;
SINGLE CRYSTALS;
SURFACE ROUGHNESS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ALUMINUM OXIDES;
ELECTRON ENERGY LOSS SPECTROSCOPY (EELS);
HETEROEPITAXIAL GROWTH;
SILICON CANTILEVERS;
SURFACE STRUCTURE;
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EID: 4344712196
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2004.07.016 Document Type: Article |
Times cited : (3)
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References (16)
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