The dielectrical properties of (B,Si) doped (Ba,Sr)TiO3 thin films fabricated by sol-gel technique

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1763-1765

  Yang, Xiaojing ^a   Yao, Xi ^a   Zhang, Liangying ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

(B,Si) dopant; BSTS thin films; Dielectric constant

Indexed keywords

DIELECTRIC PROPERTIES; DOPING (ADDITIVES); DYNAMIC RANDOM ACCESS STORAGE; FABRICATION; SOL-GELS; SPIN COATING; SUBSTRATES; THIN FILMS;

(B,SI) DOPANT; BSTS THIN FILMS; DOPANTS; SECONDARY PHASES;

BARIUM TITANATE;

EID: 4344708999     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.129     Document Type: Conference Paper

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