Infrared spectroscopic ellipsometry in semiconductor manufacturing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 771-778

  Guittet, P Y ^a   Mantz, Ulrich ^a   Weidner, Peter ^a   Stehle J L ^b   Bucchia, Marc ^b   Bourtault, Sophie ^b   Zahorski, Dorian ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b SOPRA   (France)

Author keywords

3D structures; Depth monitoring; DRAM; Effective medium; IR SE; Small spot

Indexed keywords

3D STRUCTURES; DEPTH MONITORING; EFFECTIVE MEDIA; INFRARED SPECTROSCOPIC ELLIPSOMETRY (IRSE); SMALL SPOTS;

ABSORPTION; CORRELATION METHODS; DYNAMIC RANDOM ACCESS STORAGE; ELLIPSOMETRY; INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; TRENCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 4344703245     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533935     Document Type: Conference Paper

References (8)

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7. th SPIE 2004 vol. 5375
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