Photoluminescence characteristics of Pb-doped, molecular-beam-epitaxy grown ZnSe crystal layers

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 1904-1908

  Mita, Yoh ^a   Kuronuma, Ryoichi ^a   Inoue, Masanori ^a   Sasaki, Shoichiro ^a   Miyamoto, Yoshinobu ^a  

^a TOKYO UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; CRYSTAL LATTICES; DIFFUSION; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; ZINC COMPOUNDS;

COMPLEX DEFECTS; CRYSTAL LAYERS; HOLE TRAPPING; PEAK INTENSITY;

THIN FILMS;

EID: 4344702925     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769101     Document Type: Article

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