Production control of Shallow Trench Isolation (STI) at the 130nm node using spectroscopic ellipsometry based profile metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 798-806

  Peters, Robert M ^a   Chiao, Ray H ^b   Eckert, Timothy ^b   Labra, Rene ^b   Nappa, Dario ^b   Tang, Susan ^b   Washington, Jarvis ^b  

^a KLA TENCOR CORPORATION   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Critical Dimension (CD); Metrology; Scatterometry; Shallow Trench Isolation; Spectroscopic Ellipsometry

Indexed keywords

CRITICAL DIMENSION (CD); SCATTEROMETRY; SHALLOW TRENCH ISOLATION (STI); SPECTROSCOPIC ELLIPSOMETRY;

ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; ELLIPSOMETRY; MEASUREMENTS; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS;

PRODUCTION CONTROL;

EID: 4344701679     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534085     Document Type: Conference Paper

References (3)

1. J. Hodges, Y. Lin, D. Burrows, R. Chiao, R. Peters, S. Rangarajan, K. Bhatia, S. Lakkapragada, "Improved Gate Process Control at the 130nm Node Using Spectroscopic Ellipsometry Based Profile Metrology," Proceedings of SPIE, Volume 5038-22, March 2003.
2. J. Allgair, D. Benoit, M. Drew, R. Hershey, L. Litt, P. Herrera, U. Whitney, M. Guevremont, A. Levy, S. Lakkapragada, "Implementation of Spectroscopic Critical Dimension (SCD™) for Gate CD Control and Stepper Characterization," Proceedings of SPIE, Volume 4344-57, March 2001.
3. H. Tompkins, W. McGahan, Spectroscopic Ellipsometry and Reflectometry, John Wiley & Sons, 1999.