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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3297-3306

Nonequilibrium occupancy of dangling bond defects in undoped amorphous silicon studied by subgap-light-induced electron spin resonance

(3) Hattori, Kiminori a Abe, Syuya a Okamoto, Hiroaki a

a OSAKA UNIVERSITY (Japan)

Author keywords

Amorphous silicon; Dangling bond; Electron spin; Magnetic resonance; Nonequilibrium statistics

Indexed keywords

ABSORPTION; BOUNDARY VALUE PROBLEMS; CARRIER CONCENTRATION; CHEMICAL BONDS; FERMI LEVEL; MICROWAVES; PARAMAGNETIC RESONANCE; QUARTZ; RELAXATION PROCESSES; X RAY SPECTROMETERS;

DANGLING BONDS (DB); ELECTRON SPINS; NONEQUILIBRIUM STATES; THERMAL EQUILIBRIA;

AMORPHOUS SILICON;

EID: 4344637055 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.3297 Document Type: Article

Times cited : (1)

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