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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1746-1750

Luminescence behavior of Li-doped Gd 2O 3:Eu 3+ thin film phosphors grown by pulsed laser ablation

(5) Yi, S S a Bae, J S b Seo, H J b Jeong, J H b Holloway, P H c

a Silla University (South Korea)

b Pukyong National University (South Korea)

c University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION INTENSITY; FIELD-EMISSION DISPLAY (FED); OXIDE-BASED PHOSPHORS; THIN FILM PHOSPHORS;

CRYSTALLINE MATERIALS; DIFFRACTION; DOPING (ADDITIVES); EUROPIUM COMPOUNDS; GADOLINIUM COMPOUNDS; LITHIUM COMPOUNDS; MICROSTRUCTURE; OPTIMIZATION; PHOSPHORS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; TEMPERATURE CONTROL;

THIN FILMS;

EID: 4344630227 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1764813 Document Type: Conference Paper

Times cited : (3)

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