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Volumn 16, Issue 7, 2004, Pages 1619-1621

Wavelength-selectable light sources fabricated using advanced microarray-selective epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASER DIODES; MICROARRAY SELECTABLE EPITAXY; SIDEMODE SUPPRESSION RATIO; WAVELENGTH SELECTABLE LIGHT SOURCES;

EID: 4344628638     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.828544     Document Type: Article
Times cited : (33)

References (9)
  • 1
    • 0033897598 scopus 로고    scopus 로고
    • 1.55-μm wavelength-selectable microarray DFB-LDs with a monolithically integrated MMI combiner, SOA, and EA-modulator
    • Mar
    • K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, and M. Yamaguchi, "1.55-μm wavelength-selectable microarray DFB-LDs with a monolithically integrated MMI combiner, SOA, and EA-modulator," IEEE Photon. Technol. Lett., vol. 12, pp. 242-244, Mar. 2000.
    • (2000) IEEE Photon. Technol. Lett. , vol.12 , pp. 242-244
    • Kudo, K.1    Yashiki, K.2    Sasaki, T.3    Yokoyama, Y.4    Hamamoto, K.5    Morimoto, T.6    Yamaguchi, M.7
  • 4
    • 0034498374 scopus 로고    scopus 로고
    • Growth-pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonics devices
    • S. Sudo, Y. Yokoyama, T. Nakazaki, K. Mori, K. Kudo, M. Yamaguchi, and T. Sasaki, "Growth-pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonics devices," J. Cryst. Growth, vol. 221, pp. 189-195, 2000.
    • (2000) J. Cryst. Growth , vol.221 , pp. 189-195
    • Sudo, S.1    Yokoyama, Y.2    Nakazaki, T.3    Mori, K.4    Kudo, K.5    Yamaguchi, M.6    Sasaki, T.7
  • 5
    • 0033123921 scopus 로고    scopus 로고
    • Densely-arrayed eight-wavelength semiconductor lasers fabricated by microarray-selective-epitaxy
    • May/June
    • K. Kudo, Y. Furushima, T. Nakazaki, and M. Yamaguchi, "Densely-arrayed eight-wavelength semiconductor lasers fabricated by microarray-selective-epitaxy," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 428-434, May/June 1999.
    • (1999) IEEE J. Select. Topics Quantum Electron. , vol.5 , pp. 428-434
    • Kudo, K.1    Furushima, Y.2    Nakazaki, T.3    Yamaguchi, M.4
  • 6
    • 0027108769 scopus 로고
    • Current status of selective area epitaxy by OMCVD
    • R. Bhat, "Current status of selective area epitaxy by OMCVD," J. Cryst. Growth, vol. 120, pp. 362-368, 1992.
    • (1992) J. Cryst. Growth , vol.120 , pp. 362-368
    • Bhat, R.1
  • 7
    • 0027611756 scopus 로고
    • InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD IEEE
    • June
    • M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, "InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD," IEEE J. Quantum Electron., vol. 29, pp. 2088-2096, June 1993.
    • (1993) J. Quantum Electron. , vol.29 , pp. 2088-2096
    • Aoki, M.1    Suzuki, M.2    Sano, H.3    Kawano, T.4    Ido, T.5    Taniwatari, T.6    Uomi, K.7    Takai, A.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.