Voltage control of exchange coupling in phosphorus doped silicon

Journal of Physics Condensed Matter

Volumn 16, Issue 32, 2004, Pages 5697-5704

  Wellard, C J ^a   Hollenberg, L C L ^a   Kettle, L M ^b   Goan, H S ^c  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF QUEENSLAND   (Australia)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DATA PROCESSING; DOPING (ADDITIVES); ELECTRIC FIELDS; ELECTRODES; GATES (TRANSISTOR); PHOSPHORUS; QUANTUM THEORY; READOUT SYSTEMS; VOLTAGE CONTROL;

CRYSTALLOGRAPHIC AXES; EXCHANGE COUPLING; EXCHANGE ENERGY; QUANTUM COMPUTERS;

POROUS SILICON;

EID: 4344596948     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/32/006     Document Type: Conference Paper

References (12)

1. Kane B 1998 Nature 393 133
2. Vrijen R, Yablonoviteh E, Wang K, Jiang H W, Balandin A, Roychowdhury V, Mor T and DiVincenzo D 2000 Phys. Rev. A 62 012306
3. Benjamin S C and Bose S 2003 Phys. Rev. Lett. 90 247901
4. Kollier B, Hu X and Das Sarma S 2002 Phys. Rev. Lett. 88 027903
5. Kollier B, Hu X and Das Sarma S 2002 Phys. Rev. B 66 115201
6. Wellard C J, Hollenberg L C L, Parisoli F, Kettle L M, Goan H-S, Mclntosh J A L and Jamieson D N 2003 Phys. Rev. B 68 195209
7. Pakes C I, Wellard C J, Jamieson D N, Hollenberg L C L, Prawer S, Dzurak A S, Hamilton A R and Clark R G 2002 Microelectron. J. 33 1053
8. Kohn W and Luttinger J M 1955 Phys. Rev. 97 883
9. Kohn W 1957 Solid State Physics vol 5, ed F Seitz and D Turnbull (New York: Academic) p 257
10. Wellard C J, Hollenberg L C L and Pakes C I 2002 Ncmotechnology 13 570
11. Kettle L M, Goan H-S, Smith S C, Wellard C J, Hollenberg L C L and Pakes C I 2003 Phys. Rev. B 68 075317
12. Schoneid S R, Curson N J, Simmons M Y, Ruess F J, Hallam T, Oberbeck L and Clark R G 2003 Phys. Rev. Lett. 91 136104