Microstructure and residual stress in γ-LiAlO2 layer fabricated by vapor transport equilibration on (1 1 2̄ 0) sapphire

Journal of Crystal Growth

Volumn 270, Issue 1-2, 2004, Pages 128-132

  Wang, Yinzhen ^a,c   Yang, Weiqiao ^a   Li, Shuzhi ^a   Peng, Guangliang ^a,c   Liu, Shiliang ^a,c   Zou, Jun ^a,c   Zhou, Shengming ^a   Xu, Jun ^a   Zhang, Rong ^b  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b NANJING UNIVERSITY   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A1.Residual stress; A1.Surface roughness; A1.VTE treatment temperature; A3.Vapor transport equilibration; B1. LiAlO2 layers

Indexed keywords

Γ-LIA1O2 LAYERS; CRYSTALLOGRAPHIC QUALITY; VAPOR TRANSPORT EQUILIBRATION; VTE TREATMENT TEMPERATURE;

CRYSTALLOGRAPHY; MICROSTRUCTURE; OPTIMIZATION; RESIDUAL STRESSES; SAPPHIRE; SURFACE ROUGHNESS; X RAY DIFFRACTION;

LITHIUM COMPOUNDS;

EID: 4344582964     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.006     Document Type: Article

References (10)

1. Liu L., Edgar J.H. Mater. Sci. Eng. 61:2002;37.
2. Nakamura S., Mukai T., Zhang X. Appl. Phys. Lett. 1216:1996;64.
3. Strite S., Morkor H. Vac. Sci Technol. 1237:1992;10.
4. Ke Xu, Jun Xu, Peizhen Deng, et al., J. Crystal Growth 127(1998)193.
5. Ishii T., Tazoh Y., Miyazawa S. J. Crystal Growth. 409:1998;186.
6. Ke Xu, Jun Xu, Peizhen Deng, et al. J. Chinese Ceram. Soci. 281:1998;281.
7. Shengming Zhou, Jun Xu, Shuzhi Li, et al. Phys. Stat. Sol. 7:2004;35.
8. Mass J., Bhattacharya P., Katiyar R.S. Mater. Sci. and Eng. B. 103:2003;9.
9. Pengtao Gao, L.J. Meng, M.P. dos Santos, et al., Thin Solid Films 377-378 (2000) 557.
10. Ullmann J., Kellock A.J., Baglin J.E.E. Thin Solid Films. 341:1999;238.