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Volumn 34, Issue 2 B, 2004, Pages 550-554

Semiconductor quantum dot nanostructures and their roles in the future of photonics

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EID: 4344564582     PISSN: 01039733     EISSN: None     Source Type: Journal    
DOI: 10.1590/S0103-97332004000400003     Document Type: Conference Paper
Times cited : (9)

References (9)
  • 1
    • 0001337775 scopus 로고    scopus 로고
    • Manipulating the energy levels of semiconductor quantum dots
    • S. Fafard, Z. R. Wasilewski, C. Nì. Allen, D. Picard, M. Spanner, J.P. McCaffrey, P.G. Piva, Manipulating the Energy Levels of Semiconductor Quantum Dots, Phys. Rev. B 59, 15368 (1999); B.J. Riel, K. Hinzer, S. Moisa, J. Fraser, P. Finnie, P. Piercy, S. Fafard, Z.R. Wasilewski, InAs/GaAs (100) Self-Assembled Quantum Dots: Arsenic and Capping Effects, J. Crystal Growth 236, 145 (2002).
    • (1999) Phys. Rev. B , vol.59 , pp. 15368
    • Fafard, S.1    Wasilewski, Z.R.2    Allen, C.Ni.3    Picard, D.4    Spanner, M.5    McCaffrey, J.P.6    Piva, P.G.7
  • 2
    • 0036499087 scopus 로고    scopus 로고
    • InAs/GaAs (100) self-assembled quantum dots: Arsenic and capping effects
    • S. Fafard, Z. R. Wasilewski, C. Nì. Allen, D. Picard, M. Spanner, J.P. McCaffrey, P.G. Piva, Manipulating the Energy Levels of Semiconductor Quantum Dots, Phys. Rev. B 59, 15368 (1999); B.J. Riel, K. Hinzer, S. Moisa, J. Fraser, P. Finnie, P. Piercy, S. Fafard, Z.R. Wasilewski, InAs/GaAs (100) Self-Assembled Quantum Dots: Arsenic and Capping Effects, J. Crystal Growth 236, 145 (2002).
    • (2002) J. Crystal Growth , vol.236 , pp. 145
    • Riel, B.J.1    Hinzer, K.2    Moisa, S.3    Fraser, J.4    Finnie, P.5    Piercy, P.6    Fafard, S.7    Wasilewski, Z.R.8
  • 4
    • 0034702296 scopus 로고    scopus 로고
    • Hidden symmetries in the energy levels of excitonic artificial atoms
    • M.Bayer, O.Stern, P.Hawrylak, S.Fafard, A. Forchel, Hidden symmetries in the energy levels of excitonic artificial atoms, Nature 405, 923 (2000).
    • (2000) Nature , vol.405 , pp. 923
    • Bayer, M.1    Stern, O.2    Hawrylak, P.3    Fafard, S.4    Forchel, A.5
  • 5
    • 0035882024 scopus 로고    scopus 로고
    • Interpretation and modelling of buried InAs quantum dots on GaAs and In? substrates
    • J.P. McCaffrey, M.D. Robertson, P.J. Poole, B.J. Riel, S. Fafard, "Interpretation and Modelling of Buried InAs Quantum Dots on GaAs and In? Substrates", J. Appl. Phys. 90, 1784 (2001); J.P. McCaffrey, M.D. Robertson, Z.R. Wasilewski, E.M. Griswold, L.D. Madsen, S. Fafard, Determination of the size, shape, and composition of indium-flushed self-assembled QDs by transmission electron microscopy, J. Appl. Phys. 88, 2272 (2000)
    • (2001) J. Appl. Phys. , vol.90 , pp. 1784
    • McCaffrey, J.P.1    Robertson, M.D.2    Poole, P.J.3    Riel, B.J.4    Fafard, S.5
  • 6
    • 0000259388 scopus 로고    scopus 로고
    • Determination of the size, shape, and composition of indium-flushed self-assembled QDs by transmission electron microscopy
    • J.P. McCaffrey, M.D. Robertson, P.J. Poole, B.J. Riel, S. Fafard, "Interpretation and Modelling of Buried InAs Quantum Dots on GaAs and In? Substrates", J. Appl. Phys. 90, 1784 (2001); J.P. McCaffrey, M.D. Robertson, Z.R. Wasilewski, E.M. Griswold, L.D. Madsen, S. Fafard, Determination of the size, shape, and composition of indium-flushed self-assembled QDs by transmission electron microscopy, J. Appl. Phys. 88, 2272 (2000)
    • (2000) J. Appl. Phys. , vol.88 , pp. 2272
    • McCaffrey, J.P.1    Robertson, M.D.2    Wasilewski, Z.R.3    Griswold, E.M.4    Madsen, L.D.5    Fafard, S.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.