Development of solar-blind AlGaN 128×128 Ultraviolet Focal Plane Arrays

Science in China, Series E: Technological Sciences

Volumn 51, Issue 6, 2008, Pages 820-826

  Yuan, YongGang ^a   Zhang, Yan ^a   Chu, KaiHui ^a   Li, XiangYang ^a   Zhao, DeGang ^b   Yang, Hui ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AlGaN; Photodiode; Solar blind; Ultraviolet FPA

Indexed keywords

FOCAL PLANE ARRAYS; INTEGRATED CIRCUIT LAYOUT; MICROPROCESSOR CHIPS; PHOTODIODES; WAVELENGTH;

PHOTODIODE ARRAYS; SHARP REDUCTION; SOLAR BLIND IMAGES; ULTRAVIOLET FOCAL PLANE ARRAYS; ULTRAVIOLET FPA;

ALUMINUM GALLIUM NITRIDE;

EID: 43249113203     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0091-z     Document Type: Article

References (15)

1. Litton C W, Schreiber P J, Smith G A, et al. Design requirements for high-sensitivity UV solar blind imaging detectors based on AlGaN/GaN photodetector arrays: Review. SPIE, 2001, 4454: 218-232
2. Kolb C E, Ryail S B, Wormhoudt J C, et al. The chemical physics of ultraviolet plume signatures. Proc. SPIE, 1988, 932: 2-21
3. Reine M B, Hairston A, Lamarre P, et al. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays. Proc SPIE, 2006, 6119: 1-15
4. McClintock R, Pau J L, Minder K, et al. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes. Appl Phys Lett, 2007, 90: 141112-1-141112-3
5. Minder K, Pau J L, McClintock R, et al. Scaling in back-illuminated GaN avalanche photodiodes. Appl Phys Lett, 2007, 91: 073513-1-073513-3
6. 1-x N. Appl Phys Lett, 2005, 86: 011117-1-011117-3
7. Lim B W, Gangopadhyay S, Yang J W, et al. 8×8 GaN Schottky barrier photodiode array for visible-blind imaging. Electronics Lett 1997, 33(7): 633-634
8. Gol'tsman G, Minaeva O, Korneev A, et al. Middle-infrared to visible-light ultrafast superconducting single-photon detectors. IEEE Trans Appl Supercond, 2007, 17(2): 246-251
9. Nakamura S. Analysis of real-time monitoring using interference effects. Jpn J Appl Phys, 1991, 30: 1348-1353
10. Nakamura S. In situ monitoring of GaN growth using interference effects. Jpn J Appl Phys, 1991, 30: 1620-1627
11. Xu J T. Research and fabrication of GaN-based avalanche photodiodes. PhD Thesis, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 2006
12. Ridley B K. Exact electron momentum-relaxation times in GaN associated with scattering by polar-optical phonons. J Appl Phys 1998, 84: 4020
13. Yuan Y G, Liu D F, Qiu H G, et al. 128×128 GaN UV focal plane array readout circuit study of design and encapsulation. Infrared and Laser Engineering (in Chinese). 2007, 36(Suppl): 93-96
14. Razavi B. Design of Analog CMOS Integrated Circuits, (in Chinese). Xi'an: Xi'an Jiaotong University Press. 2003
15. Simon M. Semiconductor Devices Physics and Technology (in Chinese). 2nd ed. Suzhou: Suzhou University Press. 2002