Ion beam induced modifications in electron beam evaporated aluminum oxide thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1475-1479

  Nagabhushana, K R ^a   Lakshminarasappa, B N ^a   Pandurangappa, C ^a   Sulania, Indra ^b   Kulria, P K ^b   Singh, Fouran ^b  

^a BANGALORE UNIVERSITY   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

AFM; Al2O3 thin films; Photoluminescence; Swift heavy ions; XRD

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; EVAPORATION; ION BEAMS; OPTOELECTRONIC DEVICES; SENSORS;

DIFFRACTION PEAK INTENSITY; ELECTRON BEAM EVAPORATION;

THIN FILMS;

EID: 43049165902     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.01.036     Document Type: Article

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