Native oxide emerging of the cleavage surface of gallium selenide due to prolonged storage

Semiconductors

Volumn 42, Issue 4, 2008, Pages 414-421

  Drapak, S I ^a   Gavrylyuk, S V ^a   Kovalyuk, Z D ^a   Lytvyn, O S ^b  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43049140212     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608040088     Document Type: Article

References (34)

1. S. I. Drapak and Z. D. Kovalyuk, Pis'ma Zh. Tekh. Fiz. 27(18), 1 (2001) [Tech. Phys. Lett. 27, 755 (2001)].
2. V. A. Manasson, Z. D. Kovalyuk, S. I. Drapak, and V. N. Katerinchuk, Electron. Lett. 26, 664 (1990).
3. A. G. Kazym-Zade, R. N. Makhtieva, and A. A. Akhmedov, Fiz. Tekh. Poluprovodn. 25, 1392 (1991) [Sov. Phys. Semicond. 25, 840 (1991)].
4. S. I. Drapak and Z. D. Kovalyuk, Fiz. Tekh. Poluprovodn. 41, 312 (2007) [Semiconductors 41, 301 (2007)].
5. M. Cote, M. L. Cohen, and D. J. Chadi, Phys. Rev. B 58, R4277 (1998).
6. U. K. Gautam, S. R. C. Vivekchand, A. Govindaraj, et al., J. Am. Chem. Soc. 127, 3658 (2005).
7. U. K. Gautam, S. R. C. Vivekchand, A. Govindaraj, and C. N. R. Rao, Chem. Commun. 31, 3995 (2005).
8. O. A. Balitskii, Mater. Lett. 60, 594 (2006).
9. A. P. Bakhtinov, V. N. Vodop'yanov, E. I. Slyn'ko, et al., Pis'ma Zh. Tekh. Fiz. 33(2), 80 (2007) [Tech. Phys. Lett. 33, 86 (2007)].
10. R. H. Williams and A. J. McAvej, J. Vac. Sci. Technol. 2, 867 (1972).
11. J. P. Guesdon, B. Kobbi, C. Julien, et al., Phys. Status Solidi A 102, 327 (1987).
12. V. L. Bakumenko, Z. D. Kovalyuk, E. A. Tishin, and V. F. Tishko, Fiz. Élektronika 19, 123 (1979).
13. L. N. Dobretsov, Electron and Ionic Emission (Akad. Nauk SSSR, Moscow, 1952) [in Russian].
14. N. N. Berchenko, O. A. Balitskii, R. V. Lutsiv, et al., Mater. Chem. Phys. 51, 125 (1997).
15. O. A. Balitskii, N. N. Berchenko, and V. P. Savchyn, J. Phys. Studies 4, 431 (2000).
16. O. A. Balitskii, V. P. Savchyn, and V. O. Yukhymchuk, Semicond. Sci. Technol. 17(2), L1 (2002).
17. S. I. Drapak, V. A. Manasson, V. V. Netyaga, and Z. D. Kovalyuk, Fiz. Tekh. Poluprovodn. 37, 180 (2003) [Semiconductors 37, 172 (2003)].
18. Inorganic Crystal Structure Database (ICSD) (Gmelin-Institut für Anorganische Chemie and Fachinformationszentrum FIZ Karlsruhe, 1995).
19. 3 (Nauka, Moscow, 1972) [in Russian].
20. E. A. Tutov, E. N. Bormontov, M. N. Pavlenko, et al., Zh. Tekh. Fiz. 75(8), 85 (2005) [Tech. Phys. 50, 1048 (2005)].
21. N. P. Bogoroditskiǐ, Yu. M. Volokobinskiǐ, A. A. Vorob'ev, and B. M. Tareev, Theory of Dielectrics (Nauka, Moscow, 1965) [in Russian].
22. B. V. Nekrasov, Fundamentals of General Chemistry (Khimiya, Moscow, 1974) [in Russian].
23. A. Yu. Zavrazhinov and D. N. Turchen, Kondens. Sredy Mezhfaznye Granitsy 1, 190 (1999).
24. M. Passlack, N. E. J. Hunt, E. F. Schubert, et al., Appl. Phys. Lett. 64, 2715 (1994).
25. M. S. Sze, J. Appl. Phys. 38, 2951 (1967).
26. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1971; Oxford, Clarendon, 1979).
27. A. L. Éfros and B. I. Shklovskiǐ, Usp. Fiz. Nauk 117, 401 (1975) [Sov. Phys. Usp. 18, 845 (1975)].
28. S. V. Bulyarskiǐ, V. K. Ionychev, and V. V. Kuz'min, Fiz. Tekh. Poluprovodn. 37, 117 (2003) [Semiconductors 37, 115 (2003)].
29. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984).
30. T. Hariu, S. Sasaki, H. Adachi, and Y. Shibata, Jpn. J. Appl. Phys. 16, 841 (1977).
31. M. Ogita, N. Saika, Y. Nakanishi, and Y. Hatanaka, Appl. Surf. Sci. 142(1-4), 188 (1999).
32. M. Ogita, S. Yuasa, K. Kobayashi, et al., Appl. Surf. Sci. 212-213, 397 (2003).
33. D. Kohl, Th. Ochs, W. Geyer, et al., Sens. Actuators B 59(2-3), 140 (1999).
34. C. O. Arean, A. L. Bellan, M. P. Mentruit, et al., Microporous Mesoporous Mater. 40(1-3), 35 (2000).