Natural quantum dots in the InAsGaAs wetting layer

Applied Physics Letters

Volumn 92, Issue 17, 2008, Pages

  Babinski A ^a   Borysiuk, J ^b   Kret, S ^c   Czyz, M ^a   Golnik, A ^a   Raymond, S ^d   Wasilewski, Z R ^d  

^a UNIVERSITY OF WARSAW   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; PHOTOLUMINESCENCE; POLARIZATION;

LINEAR POLARIZATION; MICROPHOTOLUMINESCENCE; POTENTIAL FLUCTUATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 43049093329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2918836     Document Type: Article

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