5.3 W CW high brightness 980-nm tapered diode lasers

Conference on Lasers and Electro-Optics Europe - Technical Digest

Volumn , Issue , 2005, Pages 113-

  Paschke, K ^a   Sumpf, B ^a   Dittmar, F ^a   Erbert, G ^a   Fricke, J ^a   Ginolas, A ^a   Dzionk, Ch ^a   Knauer, A ^a   Wenzel, H ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON DIFFRACTION; ELECTRONICS PACKAGING;

CONDUCTIVELY COOLED PACKAGES; DIFFRACTION LIMITED OUTPUT POWER; TAPERED DIODE LASERS;

SEMICONDUCTOR LASERS;

EID: 42749105471     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEOE.2005.1567901     Document Type: Conference Paper

References (1)

1. K. Paschke et al., "Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W", Conf. Dig. 19th ISLC, Matsue/Japan, IEEE 2004, pp. 43-44, September 2004.