Electric and magnetic field fluctuations in modulation doped Si/Ge quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 6, Issue 1, 2000, Pages 218-221

  Jantsch, W ^a   Wilamowski, Z ^b   Sandersfeld, N ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; PARAMAGNETIC RESONANCE; PHOTOCONDUCTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

ANDERSON TRANSITION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034138549     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00123-X     Document Type: Article

References (7)

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7. Z. Wilamowski, W. Jantsch, N. Sandersfeld, F. Schäffler, Proceedings of XXIIth International Conference Physics on Low Temperature Physics, Helsinki 1999, to be published.