Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 15, 2004, Pages

  Coelho, José ^a   Patriarche, Gilles ^a   Glas, Frank ^a   Saint Girons, Guillaume ^a   Sagnes, Isabelle ^a   Largeau, Ludovic ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; METAL;

ARTICLE; CALCULATION; CRYSTAL; GEOMETRY; MATHEMATICAL ANALYSIS; NANOPARTICLE; QUANTITATIVE ANALYSIS; SEMICONDUCTOR; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR;

EID: 42749098267     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.155329     Document Type: Article

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