Terahertz emission from narrow band gap semiconductors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6772, Issue , 2007, Pages

  Wilke, Ingrid ^a  

^a Rensselaer Polytechnic Institute   (United States)

Author keywords

Carrier concentration; Gallium antimonide; Gallium indium antimonide; Indium nitride; Narrow band gap semiconductor; Photo Dember effect; Surface field; Terahertz radiation source; Time domain terahertz imaging; Time domain terahertz spectroscopy

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRON TEMPERATURE; ENERGY GAP; INDIUM COMPOUNDS; ULTRASHORT PULSES;

GALLIUM ANTIMONIDE; GALLIUM INDIUM ANTIMONIDE; NARROW BAND GAP SEMICONDUCTORS; PHOTO-DEMBER EFFECT; SURFACE FIELD ACCELERATION; TERAHERTZ RADIATION SOURCES; TIME DOMAIN TERAHERTZ IMAGING; TIME DOMAIN TERAHERTZ SPECTROSCOPY;

SEMICONDUCTOR MATERIALS;

EID: 42449133413     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.735101     Document Type: Conference Paper

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