In-situ observation of focused ion beam micropatterns on semiconductors and insulators

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7010-7014

  Tanaka, Miyoko ^a   Furuya, Kazuo ^a   Saito, Tetsuya ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Focused ion beam (FIB); Ga precipitation; GaAs; In situ observation; Radiation damage; Si; SiC; SiO2; Transmission electron microscopy (TEM)

Indexed keywords

EID: 4244026353     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7010     Document Type: Article

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