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Volumn 60, Issue 24, 1999, Pages 16531-16542

Real-time modulation of si-h vibration in hydrogenated amorphous silicon

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EID: 4243811901     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.16531     Document Type: Article
Times cited : (9)

References (26)
  • 16
    • 85037880840 scopus 로고    scopus 로고
    • Even if dangling bonds are induced by breaking some bond other than a weak Si-Si bond, such as the nearby Si-H bond as suggested by Brantz (Ref. 8), the meaning of (Formula presented) and the procedures for evaluating it as presented in Secs. V A and V B still hold as far as two dangling bonds are formed after breaking the bond followed by their stabilization.
    • Even if dangling bonds are induced by breaking some bond other than a weak Si-Si bond, such as the nearby Si-H bond as suggested by Brantz (Ref. 8), the meaning of (Formula presented) and the procedures for evaluating it as presented in Secs. V A and V B still hold as far as two dangling bonds are formed after breaking the bond followed by their stabilization.
  • 20
    • 0032068992 scopus 로고    scopus 로고
    • In my previous work [J. Non-Cryst. Solids 227-230, 120 (1998)], a preliminary analysis was made on the spectral change of the PB band which was induced by the light soaking, but an argument concerning the defect-quenching effect was not convincing.
    • In my previous work [J. Non-Cryst. Solids 227-230, 120 (1998)], a preliminary analysis was made on the spectral change of the PB band which was induced by the light soaking, but an argument concerning the defect-quenching effect was not convincing.


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