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Even if dangling bonds are induced by breaking some bond other than a weak Si-Si bond, such as the nearby Si-H bond as suggested by Brantz (Ref. 8), the meaning of (Formula presented) and the procedures for evaluating it as presented in Secs. V A and V B still hold as far as two dangling bonds are formed after breaking the bond followed by their stabilization.
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Even if dangling bonds are induced by breaking some bond other than a weak Si-Si bond, such as the nearby Si-H bond as suggested by Brantz (Ref. 8), the meaning of (Formula presented) and the procedures for evaluating it as presented in Secs. V A and V B still hold as far as two dangling bonds are formed after breaking the bond followed by their stabilization.
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17
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0347737062
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In my previous work [J. Non-Cryst. Solids 227-230, 120 (1998)], a preliminary analysis was made on the spectral change of the PB band which was induced by the light soaking, but an argument concerning the defect-quenching effect was not convincing.
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In my previous work [J. Non-Cryst. Solids 227-230, 120 (1998)], a preliminary analysis was made on the spectral change of the PB band which was induced by the light soaking, but an argument concerning the defect-quenching effect was not convincing.
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25
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0032649462
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