STM studies of Si(5 5 12) 2 × 1 surfaces

Surface Science

Volumn 357-358, Issue , 1996, Pages 522-526

  Suzuki, T ^a   Minoda, H ^a   Tanishiro, Y ^a   Yagi, K ^a   Sueyoshi, T ^b   Sato, T ^b   Iwatsuki, M ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JEOL LTD   (Japan)

Author keywords

Scanning tunneling microscopy; Silicon; Single crystal surfaces; Surface roughening

Indexed keywords

ELECTRON MICROSCOPY; MATHEMATICAL MODELS; PHASE SHIFT; PHASE TRANSITIONS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; SURFACES;

ADATOM; BULK TERMINATED STRUCTURE; PATTERN ANALYSIS; REFLECTION ELECTRON MICROSCOPY;

SURFACE STRUCTURE;

EID: 5444224395     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00215-4     Document Type: Article

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