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Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 19-26

Hydrogen annealed silicon wafer

(3) Nadahara, S a Kubota, H a Samata, S a

a TOSHIBA CORPORATION (Japan)

Author keywords

BMD; COP; High Temperature Annealing; Hydrogen Annealing; Oxide breakdown; Oxygen Out Diffusion; Si

Indexed keywords

ANNEALING; PRECIPITATION (CHEMICAL); SUBSTRATES; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; HIGH TEMPERATURE APPLICATIONS; HYDROGEN; OXYGEN;

ANNEALED SILICON WAFERS; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; HYDROGEN ANNEALING; OUT DIFFUSION; OXIDE BREAKDOWN; OXYGEN PRECIPITATION; ULSI MANUFACTURING;

SILICON WAFERS;

CRYSTAL ORIGINATED PARTICLES (COP); OXIDE BREAKDOWN; OXYGEN PRECIPITATION;

EID: 4243614658 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.57-58.19 Document Type: Article

Times cited : (11)

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