Measurements of transient photocapacitance and photocurrent on MOVPE-grown Au/ZnSe/GaAs heterostructures

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 199-202

  Germain, M ^a   El Yacoubi, M ^a   Evrard, R ^a   Taudt, W ^b   Heuken, M ^b  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Deep levels; Interface states; Photocapacitance; Photocurrent; ZnSe

Indexed keywords

EID: 4243578129     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80321-7     Document Type: Article

References (5)

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