Nonlinear low-temperature transport of electrons through a multilevel quantum dot

Superlattices and Microstructures

Volumn 22, Issue 1, 1997, Pages 75-79

  Inoshita, Takeshi ^a   Kuramoto, Yoshio ^b   Sakaki, Hiroyuki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Electron correlation; Quantum dot; Tunneling

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTRONIC STRUCTURE; GREEN'S FUNCTION; LOW TEMPERATURE PROPERTIES; VARIATIONAL TECHNIQUES;

ELECTRON CORRELATION; NONLINEAR LOW TEMPERATURE TRANSPORT; SOURCE DRAIN VOLTAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030712797     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0265     Document Type: Article

References (18)

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18. The average level separation δ (due to lateral confinement) and Coulomb repulsion U of a disk-shaped n-GaAs dot with radius 1000 Å are 0.2 meV and 1 meV, respectively [5]. We considered a disk-shaped dot simply because dot samples used in transport studies are usually made by weak lateral confinement of a thin 2-dimensional electron layer.