Development of a Si/C diffusion barrier layer based on the Mo-Si-C-N system

Surface and Coatings Technology

Volumn 94-95, Issue , 1997, Pages 7-12

  Govindarajan, S ^a   Moore, J J ^a   Ohno, T R ^a   Disam, J ^b  

^a Department of Metallurgical and Materials Engineering   (United States)

^b SCHOTT AG   (Germany)

Author keywords

Composite films; Diffusion barrier layer; Reactive sputtering; rf magnetron sputtering

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIFFUSION IN SOLIDS; MAGNETRON SPUTTERING; MOLYBDENUM COMPOUNDS; PROTECTIVE COATINGS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIER LAYERS; REACTIVE SPUTTERING;

SILICON CARBIDE;

EID: 4243508312     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00468-4     Document Type: Article

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