Effect of low-dose ion implantation on the stress of low-pressure chemical vapor deposited silicon nitride films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1256-1259

  Yamamoto, Ichiro ^a   Kasai, Naoki ^a   Nishimoto, Shozo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Ion implantation; LOCOS; Silicon nitride; Tensile stress

Indexed keywords

EID: 4243222192     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1256     Document Type: Article

References (6)

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2. A. Imai, N. Hasegawa and S. Okazaki: Proc. SPIE 2726 (1996) 104.
3. G. W. Reutingler and R. A. Moline: Ion Implantation in Semiconductors, ed. S. Namba (Plenum, New York, 1975) p. 673.
4. E. P. EerNisse: J. Appl. Phys. 48 (1977) 3337.
5. Y. Akasaka, M. Kashiwagi, K. Maeda and T. Yoshimi: VLSI Process Data Handbook (Science Forum, Tokyo, 1990) [in Japanese].
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