The effect of filling on the low-temperature energy diffusion in disordered hopping systems

Journal of Physics Condensed Matter

Volumn 8, Issue 43, 1996, Pages

  Arkhipov, V I ^a,b   Adriaenssens, G J ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; LOW TEMPERATURE PROPERTIES; NONLINEAR EQUATIONS; PROBABILITY; RELAXATION PROCESSES;

DISORDERED HOPPING SYSTEMS; EFFECT OF FILLING; EXCITED CARRIERS; LOW TEMPERATURE ENERGY DIFFUSION; OCCUPATION PROBABILITY;

CHARGE CARRIERS;

EID: 4243184046     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/43/002     Document Type: Article

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