Einstein's relationship for hopping electrons

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 214-217

  Baranovskii, S D ^a   Faber, T ^a   Hensel, F ^a   Thomas, P ^a   Adriaenssens, G J ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; ELECTRON ENERGY LEVELS; ELECTRONS; ENERGY DISSIPATION; LOW TEMPERATURE PHENOMENA; PHOTOCONDUCTIVITY; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS;

AMORPHOUS SEMICONDUCTORS; BAND TAIL STATES; BOLTZMANN CONSTANT; EINSTEIN RELATIONSHIP; ENERGY LOSS HOPPING; EXPONENTIAL BAND TAIL; HOPPING ELECTRONS; HOPPING RELAXATION;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030563568     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00685-0     Document Type: Article

References (10)

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2. N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford, 1971) p. 44.
3. N.V. Zykov, Sov. Phys. Semicond. 22 (1988) 1328.
4. C.E. Nebel and R.A. Street, Philos. Mag. B67 (1993) 407.
5. B.I. Shklovskii, H. Fritzsche and S.D. Baranovskii, Phys. Rev. Lett. 62 (1989) 2989.
6. S.D. Baranovskii, H. Fritzsche, E.I. Levin, I.M. Ruzin and B.I. Shklovskii, Sov. Phys. JETP 69 (1989) 773.
7. B.I. Shklovskii, E.I. Levin, H. Fritzsche and S.D. Baranovskii, Advances in Disordered Semiconductors 3, ed. H. Fritzsche (World Scientific, Singapore, 1990) p. 161.
8. D. Ritter, E. Zeldov and K. Weiser, Phys. Rev. B38 (1988) 8296.
9. R.A. Smith, Semiconductors (Cambridge University, 1978) p. 172.
10. B.I. Shklovskii, private communication (1989).