Comparison of plasma generation behaviors between a single crystal semiconductor bridge (single-SCB) and a polysilicon semiconductor bridge (poly-SCB)

Sensors and Actuators, A: Physical

Volumn 115, Issue 1, 2004, Pages 104-108

  Park, Myung Il ^a   Choo, Hyo Tae ^a   Yoon, Suk Hwan ^b   Park, Chong Ook ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Aerospace Research Institute (KARI)   (South Korea)

Author keywords

Igniter; Semiconductor bridge; Silicon wet etching; Thermal structure

Indexed keywords

COMPUTATIONAL COMPLEXITY; DIFFUSION; ETCHING; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MICROELECTROMECHANICAL DEVICES; POLYSILICON; THERMAL INSULATION;

IGNITERS; SEMICONDUCTOR BRIDGE; SILICON WET ETCHING; THERMAL STRUCTURE;

SINGLE CRYSTALS;

EID: 4243131459     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.04.038     Document Type: Article

References (7)

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