Characteristics of plasma generated by polysilicon semiconductor bridge (SCB)

Sensors and Actuators, A: Physical

Volumn 96, Issue 2-3, 2002, Pages 252-257

  Lee, Kye Nam ^a   Park, Myung Il ^a   Choi, Sung Ho ^a   Park, Chong Ook ^a   Uhm, Han S ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Ajou University   (South Korea)

Author keywords

Igniter; No fire condition; Plasma; Semiconductor bridge

Indexed keywords

CAPACITORS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; PHOTODIODES; POLYSILICON;

POWER DISSIPATION; SEMICONDUCTOR BRIDGE;

SEMICONDUCTOR PLASMAS;

EID: 0037186167     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00836-6     Document Type: Article

References (6)

1. Semiconductor bridge: A plasma generator for the ignition of explosive
2. A method for obtaining and analyzing sensitivity data
3. Breakdown properties of high-pressure electrical discharge
4. Properties of plasma generated by electrical breakdown in flames