Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Zhou, Shengqiang ^a   Potzger, K ^a   Talut, G ^a   Von Borany, J ^a   Skorupa, W ^a   Helm, M ^a   Fassbender, J ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; NANOCRYSTALS; PHASE TRANSITIONS; PRECIPITATES; X RAY DIFFRACTION;

DILUTED MAGNETIC SEMICONDUCTORS (DMS); MAGNETIC IMPURITIES; ROOM TEMPERATURE;

MAGNETIC SEMICONDUCTORS;

EID: 42149180574     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828710     Document Type: Conference Paper

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