On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy

AIP Conference Proceedings

Volumn 893, Issue , 2007, Pages 341-342

  Kroger R ^a   Paskova, T ^a   Rosenauer, A ^a   Hommel, D ^a   Monemar, B ^b   Fini, P ^c   Haskell, B ^c   Speck, J ^c   Nakamura, S ^c  

^a UNIVERSITY OF BREMEN   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

^c University of California   (United States)

Author keywords

A plane GaN; Defects; HVPE; TEM

Indexed keywords

EID: 42149177436     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2729907     Document Type: Conference Paper

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