Optical control over electron g factor and spin decoherence in (In,Ga) AsGaAs quantum dots

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Rietjens, J H H ^a   Quax, G W W ^a   Bosco, C A C ^a   Notzel R ^a   Silov, A Yu ^a   Koopmans, B ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CONTINUOUS WAVE LASERS; ELECTRIC FIELDS; ELECTRON BEAMS; ELECTRON TUNNELING;

ELECTRON IN-PLANE G FACTOR; SPIN DECAY TIME; SPIN DECOHERENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 42149173750     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838156     Document Type: Article

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