Electron and hole spin dynamics in semiconductor quantum dots

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Gundogdu K ^a   Hall, K C ^a,c   Koerperick, E J ^a   Pryor, C E ^a   Flatte M E ^a   Boggess, Thomas F ^a   Shchekin, O B ^b   Deppe, D G ^b  

^a UNIVERSITY OF IOWA   (United States)

^b The University of Texas at Austin   (United States)

^c DALHOUSIE UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SPIN DYNAMICS; SPIN QUANTIZATION; SPIN RELAXATION; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);

ELECTRON MOBILITY; HETEROJUNCTIONS; HOLE MOBILITY; MODULATION; PHOTOLUMINESCENCE; POLARIZATION; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17944366822     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1857067     Document Type: Article

References (32)

1. R. J. Epstein, D. T. Fuchs, W. V. Schoenfeld, P. M. Petroff, and D. D. Awschalom, Appl. Phys. Lett. 78, 733 (2001).
2. S. Cortez, O. Krebs, S. Laurent, M. Senes, X. Marie, P. Voisin, R. Ferreira, G. Bastard, J.-M. Gérard, and T. Amand, Phys. Rev. Lett. 89, 207401 (2002).
3. J. A. Gupta, D. D. Awschalom, X. Peng, and A. P. Alivisatos, Phys. Rev. B 59, R10421 (1999).
4. T. H. Stievater, X. Li, T. Cubel, D. G. Steel, D. Gammon, D. S. Katzer, and D. Park, Appl. Phys. Lett. 81, 4251 (2002).
5. M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, Phys. Rev. Lett. 86, 1634 (2001).
6. V. K. Kalevich, M. Paillard, K. V. Kavokin, X. Marie, A. R. Kovsh, T. Amand, A. E. Zhukov, Yu. G. Musikhin, V. M. Ustinov, E. Vanelle, and B. P. Zakharchenya, Phys. Rev. B 64, 045309 (2001).
7. I. E. Kozin, V. G. Davydov, I. V. Ignatiev, A. V. Kavokin, K. V. Kavokin, G. Malpuech, Hong-Wen Ren, M. Sugisaki, S. Sugou, and Y. Masumoto, Phys. Rev. B 65, 241312 (2002).
8. M. Scheibner, G. Bacher, S. Weber, A. Forchel, Th. Passow, and D. Hommel, Phys. Rev. B 67, 153302 (2003).
9. D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
10. P. Chen, C. Piermarocchi, and L. J. Sham, Phys. Rev. Lett. 87, 067401 (2001).
11. F. Troiani, U. Hohenester, and E. Molinari, Phys. Rev. B 62, R2263 (2000).
12. A. V. Khaetskii and Y. V. Nazarov, Phys. Rev. B 61, 12639 (2000).
13. Y. G. Semenov and K. W. Kim, Phys. Rev. Lett. 92, 026601 (2004).
14. I. A. Merkulov, A. L. Efros, and M. Rosen, Phys. Rev. B 65, 205309 (2002).
15. T. C. Damen, L. Viña, J. E. Cunningham, J. Shah, and L. J. Sham, Phys. Rev. Lett. 67, 3432 (1991).
16. D. J. Hilton and C. L. Tang, Phys. Rev. Lett. 89, 146601 (2002).
17. T. Flissikowski, I. A. Akimov, A. Hundt, and F. Henneberger, Phys. Rev. B 68, 161309 (2003).
18. I. Brener, W. H. Knox, K. W. Goossen, and J. E. Cunningham, Phys. Rev. Lett. 70, 319 (1993).
19. J. M. Kikkawa and D. D. Awschalom, Phys. Rev. Lett. 80, 4313 (1998).
20. Ph. Roussignol, P. Rolland, R. Ferreira, C. Delalande, G. Bastard, A. Vinattieri, L. Carraresi, M. Colocci, and B. Etienne, Surf. Sci. 267, 360 (1992).
21. Optical Orientation, edited by F. Meier and B. P. Zakharchenya (North-Holland, New York, 1984).
22. Excitonic spin relaxation does not play a role in the circular polarization kinetics for these doped QD, due to the large doping density used.
23. C. E. Pryor and M. E. Flatté, Phys. Rev. Lett. 91, 257901 (2003).
24. K. Gündoǧdu, K. C. Hall, T. F. Boggess, D. G. Deppe, and O. Shchekin, Appl. Phys. Lett. 84, 2793 (2004).
25. The carrier density was determined using photoluminescence excitation measurements and the known 77 K absorption spectrum of bulk GaAs [M. D. Sturge, Phys. Rev. 127, 768 (1962)].
26. K. C. Hall, K. Gündoǧdu, T. F. Boggess, O. B. Shchekin, and D. G. Deppe, Proc. SPIE 5361, 76 (2004).
27. For instance, spin-polarized holes injected into the bulk GaAs barriers at 300 K were observed to lose all spin information prior to capture due to the longer capture time and more rapid spin relaxation in the barriers at elevated temperatures (Ref. 24).
28. T. B. Bahder, Phys. Rev. B 41, 11992 (1990).
29. C. Pryor, M.-E. Pistol, and L. Samuelson, Phys. Rev. B 56, 10404 (1997).
30. C. Pryor, Phys. Rev. B 57, 7190 (1998).
31. A. V. Uskov, A.-P. Jauho, B. Tromborg, J. Mork, and R. Lang, Phys. Rev. Lett. 85, 1516 (2000).
32. In Ref. 5, these differing results were tentatively explained based on exchange scattering with carriers in the GaAs barriers, the wetting layer and the quantum dot excited states, although the observed difference in spin dynamics even for low carrier densities (one to two electron-hole pairs per QD) suggests that such a carrier-mediated spin flip process should be weak.