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Volumn 6895, Issue , 2008, Pages
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Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE
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Author keywords
Experiment; Molecular beam epitaxy; Photoluminescence; ZnO
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Indexed keywords
CHARGED PARTICLES;
CRYSTAL GROWTH;
DECAY (ORGANIC);
DEFLECTION (STRUCTURES);
ELECTRONS;
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
IONS;
LEAKAGE (FLUID);
LIGHT EMISSION;
LUMINESCENCE;
METALLIC FILMS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
OPTICAL MATERIALS;
OPTICAL PROPERTIES;
OXIDES;
OXYGEN;
PHOTOACOUSTIC EFFECT;
PHOTOLUMINESCENCE;
PIGMENTS;
PLASMA (HUMAN);
PLASMA DIAGNOSTICS;
PLASMAS;
PULSED LASER DEPOSITION;
SAPPHIRE;
SEMICONDUCTING CADMIUM TELLURIDE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR QUANTUM WIRES;
SUBSTRATES;
ZINC;
ZINC ALLOYS;
ZINC OXIDE;
ZINC SULFIDE;
(PL) PROPERTIES;
A PLANE;
C-SAPPHIRE;
DECAY CONSTANTS;
DECAY TIME;
DEFECT BANDS;
DEFLECTION (OVALIZATION);
EXCITONIC EMISSIONS;
ION DAMAGE;
LUMINESCENCE DECAYS;
NEAR-BAND-EDGE (NBE);
OPTICAL (PET) (OPET);
OXIDE MATERIALS;
OXYGEN PLASMAS;
PEAK POSITIONS;
PHOTOLUMINESCENCE (PL) SPECTRUM;
PL SPECTRUM;
PLASMA ASSISTED MBE (PAMBE);
PLASMA POWERS;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE);
RF POWERING;
ROOM-TEMPERATURE (RT);
SAPPHIRE SUBSTRATES;
SPECTRAL RANGES;
TIME-RESOLVED PHOTOLUMINESCENCE (TRPL);
ZNO FILMS;
OPTICAL FILMS;
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EID: 42149122584
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.764132 Document Type: Conference Paper |
Times cited : (3)
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References (9)
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