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Journal of Analytical Atomic Spectrometry

Volumn 23, Issue 4, 2008, Pages 550-554

Accurate determinations of Ge atom fractions in SiGe semiconductor chips using high performance ICP-OES

(3) Rabb, Savelas A a Winchester, Michael R a Yu, Lee L a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA; MICROPROCESSOR CHIPS; OPTICAL EMISSION SPECTROSCOPY; SODIUM COMPOUNDS; UNCERTAINTY ANALYSIS; VOLATILE ORGANIC COMPOUNDS;

ACCURATE DETERMINATIONS; ATOM FRACTION; DIGESTION; ROOM TEMPERATURE; SEMICONDUCTOR CHIPS;

GERMANIUM;

EID: 41549156950 PISSN: 02679477 EISSN: 13645544 Source Type: Journal
DOI: 10.1039/b715148a Document Type: Article

Times cited : (5)

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