Single mode 1.28 μm InGaAs VCSELs using an inverted surface relief

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2006, Pages 123-124

  Soderberg E ^a   Modh, P ^a   Gustavsson, J S ^a   Larsson, A ^a   Zhang, Z Z ^b   Berggren, J ^b   Hammar, M ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION; SEMICONDUCTOR LASERS; SINGLE MODE FIBERS;

MODE SUPPRESSION;

SURFACE EMITTING LASERS;

EID: 41549137086     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. P. Sundgren et.al., "High performance 1.3 μm InGaAs vertical cavity surface emittting lasers", Electron. Lett. 39, 1128, 2003.
2. H. Martinsson et.al., "Transverse mode selection in large area oxide confined VCSELs using a shallow surface structure", IEEE Photon. Techn. Lett. 11, 1536, 1999.
3. H-C. Kuo et.al., "Single mode 1.27 μm InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers", IEEE J. Sel. Top. Quantum Electron. 11, 121, 2005
4. Å. Haglund et.al., " Single fundamental mode output power exceeding 6 mW from VCSELs with a shallow surface relief, IEEE Photon. Technol. Lett. 16, 368, 2004.