Characterization of manganese-doped BaTi O3 - (Bi1/2 Na1/2) Ti O3 positive temperature coefficient of resistivity ceramics using impedance spectroscopy

Journal of Applied Physics

Volumn 103, Issue 6, 2008, Pages

  Xiang, Ping Hua ^a   Takeda, Hiroaki ^a   Shiosaki, Tadashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; GRAIN BOUNDARIES; SEMICONDUCTOR DOPING; THERMOELECTRICITY; VACANCIES;

IMPEDANCE SPECTROSCOPY; RESISTANCE-CAPACITANCE (RC) RESPONSE; TEMPERATURE COEFFICIENT;

BARIUM COMPOUNDS;

EID: 41549128957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2884714     Document Type: Article

References (23)

1. B. Huybrechts, K. Ishizaki, and M. Takata, J. Mater. Sci. JMTSAS 0022-2461 10.1007/BF00362121 30, 2463 (1995).
2. M. Kuwabara and K. Kumamoto, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1983.tb10578.x 66, C-214 (1983).
3. H. Takeda, W. Aoto, and T. Shiosaki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2042551 87, 102104 (2005).
4. T. Shimada, K. Touji, Y. Katsuyama, H. Takeda, and T. Shiosaki, J. Eur. Ceram. Soc. JECSER 0955-2219 10.1016/j.jeurceramsoc.2007.02.171 27, 3877 (2007).
5. P.-H. Xiang, H. Takeda, and T. Shiosaki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2799878 91, 162904 (2007).
6. P.-H. Xiang, H. Takeda, and T. Shiosaki, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 46, 6995 (2007).
7. W. Heywang, J. Mater. Sci. JMTSAS 0022-2461 10.1007/BF00550094 6, 1214 (1971).
8. H. M. Ai-Allak, A. W. Brinkman, G. L. Russell, and J. Woods, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.340150 63, 4530 (1988).
9. J. Daniels and R. Wernicke, Philips Res. Rep. PRREA9 0031-7918 31, 544 (1976).
10. T. Miki, A. Fujimoto, and S. Jida, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366870 83, 1592 (1998).
11. D. C. Sinclair and A. R. West, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.344049 66, 3580 (1989).
12. N. S. Hari, P. Padmini, and T. R. N. Kutty, J. Mater. Sci.: Mater. Electron. JSMEEV 0957-4522 10.1023/A:1018592618321 8, 15 (1997).
13. D. C. Sinclair and A. R. West, J. Mater. Sci. JMTSAS 0022-2461 10.1007/BF00354542 29, 6061 (1994).
14. M. M. Gallego and A. R. West, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1374476 90, 394 (2001).
15. H. S. Maiti and R. N. Basu, Mater. Res. Bull. MRBUAC 0025-5408 10.1016/0025-5408(86)90227-8 21, 1107 (1986).
16. S. B. Desu and D. A. Payne, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1990.tb06468.x 73, 3407 (1990).
17. S. B. Desu and D. A. Payne, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1990.tb06469.x 73, 3416 (1990).
18. S. H. Yoon and H. Kim, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 38, 4824 (1999).
19. S. H. Yoon, K. H. Lee, and H. Kim, J. Am. Ceram. Soc. JACTAW 0002-7820 83, 2463 (2000).
20. Y.-M. Chiang and T. Takagi, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1992.tb07239.x 75, 2017 (1992).
21. S. B. Desu and D. A. Payne, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1992.tb07240.x 75, 2020 (1992).
22. J. Daniels, K. H. Härdtl, and R. Wernicke, Philips Tech. Rev. PTREAN 0031-7926 38, 73 (1978).
23. C.-J. Ting, C.-J. Peng, H.-Y. Lu, and S.-T. Wu, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1990.tb06514.x 73, 329 (1990).