Investigation of the dopant segregation phenomenon in Nb-doped BaTiO3 positive-temperature-coefficient-resistor by impedance analysis

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4824-4831

  Yoon, Seok Hyun ^a   Kim, Hwan ^a  

^a Seoul National University   (South Korea)

Author keywords

BaTiO3; Grain boundary; Impedanc; PTCR; Segregation

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ELECTRIC IMPEDANCE; FERMI LEVEL; GRAIN BOUNDARIES; MATHEMATICAL MODELS; NIOBIUM; POSISTORS; POSITIVE TEMPERATURE COEFFICIENT; SEGREGATION (METALLOGRAPHY); TEMPERATURE; TITANIUM;

DOPANT SEGREGATION; GRAIN RESISTANCE; VALENCE CHANGE;

BARIUM TITANATE;

EID: 0033173902     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4824     Document Type: Article

References (5)

1. G. H. Jonker: Solid State Electron. 7 (1964) 895.
2. R. Wernickc: Philips Res. Rep. 31 (1976) 526.
3. H. M. Al-Allak, J. Illingsworth, A. W. Brinkman, G. J. Russel and J. Woods: J. Appl. Phys. 64 (1988) 6477.
4. M. Drofenik: J. Am. Ceram. Soc. 70 (1987) 311.
5. T. Murakami, M. Nakahar, T. Miyashita and S. Ueda: J. Am. Ceram. Soc. 56 (1973) 291.