Growth of nanodots on a strained GaAs epilayer using scanning tunneling microscope

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2244-2247

  Abel, Joseph ^a   Kim, Dong Jun ^a   Everett, E Addison ^a   Yang, Haeyeon ^a  

^a UTAH STATE UNIVERSITY   (United States)

Author keywords

A1. Diffusion; A1. Nanostructures; A1. Surfaces; A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

EPILAYERS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SURFACE DIFFUSION;

FEEDBACK CURRENTS; HIGH-BIAS VOLTAGES; ROOM TEMPERATURE; TENSILE STRAINED SURFACES;

NANOSTRUCTURES;

EID: 41449114255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.022     Document Type: Article

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