Annealing induced transition of flat strained InGaAs epilayers into three-dimensional islands

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Kim, Dong Jun ^a   Everett, E Addison ^a   Yang, Haeyeon ^a  

^a UTAH STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLAT LAYERS; ROUGHENING TRANSITIONS; STRAIN FIELD; THREE-DIMENSIONAL (3D) ISLANDS;

ANISOTROPY; ANNEALING; CRYSTAL GROWTH; DIFFUSION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; THREE DIMENSIONAL;

EPILAYERS;

EID: 34249866554     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2736637     Document Type: Article

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