Plasma-deposited silylation resist for 193 nm lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4207-4211

  Horn, Mark W ^a   Maxwell, Brian E ^a   Goodman, Russell B ^a   Kunz, Roderick R ^a   Eriksen, Lynn M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4143097748     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588576     Document Type: Article

References (7)

1. M. W. Horn, S. W. Pang, and M. Rothschild, J. Vac. Sci. Technol B 8, 1493 (1990).
2. A. T. Wiedman and A. M. Joshi, Appl. Phys. Lett. 62, 372 (1993).
3. M. W. Horn, B. E. Maxwell, R. R. Kunz, M. S. Hibbs, S. C. Palmateer, and A. R. Forte, Proc. SPIE 2438, 760 (1995).
4. M. W. Horn, M. Rothschild, B. E. Maxwell, R. B. Goodman, and L. M. Eriksen, Appl. Phys. Lett. 68, 179 (1996).
5. M. A. Hartney, M. Rothschild, R. R. Kunz, D. J. Ehrlich, and D. C. Shaver, J. Vac. Sci. Technol. B 8, 1476 (1990).
6. S. C. Palmateer, R. R. Kunz, M. W. Horn, A. R. Forte, and M. Rothschild, Proc. SPIE 2438, 455 (1995).
7. M. A. Hartney, J. Vac. Sci. Technol. B 11, 681 (1993).