Plasma-deposited silylation resist for 193 nm lithography

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 179-181

  Horn, Mark W ^a   Rothschild, Mordechai ^a   Maxwell, Brian E ^a   Goodman, Russell B ^a   Kunz, Roderick R ^a   Eriksen, Lynn M ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4043144528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116452     Document Type: Article

References (5)

1. M. W. Horn, S. W. Pang, and M. Rothschild, J. Vac. Sci. Technol. B 8, 1493 (1990).
2. A. T. Wiedman and A. M. Joshi, Appl. Phys. Lett. 62, 372 (1993).
3. M. A. Hartney, M. Rothschild, R. R. Kunz, D. J. Ehrlich, and D. C. Shaver, J. Vac. Sci. Technol. B 8, 1476 (1990).
4. S. C. Palmateer, R. R. Kunz, M. W. Horn, A. R. Forte, and M. Rothschild, SPIE Proc. 2438, 455 (1995).
5. D. W. Johnson and M. A. Hartney, Jpn. J. Appl. Phys. 31, 4321 (1992).