Low voltage electron-beam lithography based InGaAs/GaAs quantum dot arrays with 1 meV luminescence linewidths

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2829-2831

  Wang, K H ^a   Pecher, A ^a   Hofling E ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4143089388     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589737     Document Type: Article

References (11)

1. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
2. A. Yariv, Appl. Phys. Lett. 53, 1033 (1988).
3. E. Kapon, S. Simhony, R. Bhat, and D. M. Hwang, Appl. Phys. Lett. 55, 2715 (1989).
4. R. Rinaldi, R. Cingolani, M. Lepore, M. Ferrara, I. M. Catalano, F. Rossi, L. Rota, E. Molinari, P. Lugli, U. Marti, D. Martin, F. Moirer-Genoud, P. Ruterana, and F. K. Reinhardt, Phys. Rev. Lett. 73, 2899 (1994).
5. M. Grundmann, J. Christen, N. N. Ledentsov, J. Bohrer, D. Biimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gosele, J. Heydenreich, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, P. S. Kopev, and Z. I. Alferov, Phys. Rev. Lett. 74, 4043 (1995).
6. R. Steffen, Th. Koch, J. Oshinowo, F. Faller, and A. Forchel, Appl. Phys. Lett. 68, 223 (1996).
7. I. N. Stranski and L. von Krastanow, Akad. Wiss. Lit. Mainz Abh. Math. Naturwiss. Kl. 146, 797 (1939).
8. R. Steffen, F. Faller, and A. Forchel, J. Vac. Sci. Technol. B 12, 3653 (1994).
9. S. Le Goff and B. Stebe, Phys. Rev. B 47, 1383 (1993).
10. J.-P. Reithmaier, R. Höger, and H. Riechert, Phys. Rev. B 43, 4933 (1991).
11. D. C. Bertolet, J.-K. Hu, S. H. Jones, and K. M. Lau, Appl. Phys. Lett. 52, 293 (1988).