Characteristics of excimer-laser-annealed polysilicon films for application in polysilicon thin film transistor devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3014, Issue , 1997, Pages 112-118

  Voutsas, Apostolos T ^a   Marmorstein, Aaron ^b   Solanki, Rajendra ^b  

^a Sharp Microelectronics Technology   (United States)

^b OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

Excimer laser anneal (ELA); Grain size distributions; Polysilicon films; Polysilicon TFTs

Indexed keywords

AMORPHOUS SILICON; ANNEALING; APPLICATIONS; EXCIMER LASERS; FRICTION; GAS LASERS; GRAIN SIZE AND SHAPE; IMAGE SEGMENTATION; LASERS; LIGHT SOURCES; LIQUID CRYSTAL DISPLAYS; LIQUID CRYSTALS; METAL ANALYSIS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SIZE DISTRIBUTION; SUBSTRATES; SURFACE PROPERTIES; SURFACE ROUGHNESS; THICKNESS MEASUREMENT; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AVERAGE GRAIN SIZES; BARRIER LAYER (BL); ENERGY DENSITIES; EXCIMER LASER ANNEAL (ELA); GRAIN SIZE DISTRIBUTIONS; GRAIN SIZES; LASER ENERGY DENSITY; POLYSILICON FILMS; POLYSILICON TFTS; PROCESS PARAMETERS; SILICON FILMS; SUBSTRATE TEMPERATURE (ST); XECL EXCIMER LASERS;

AMORPHOUS FILMS;

EID: 4143056037     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.270284     Document Type: Conference Paper

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