Far-infrared reflectivity as a probe of point defects in Zn- and Cd-doped HgTe

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Cebulski, J ^a   Sheregii, E M ^a   Polit, J ^a   Marcelli, A ^b   Piccinini, M ^b,f   Kisiel, A ^c   Kucherenko, I V ^d   Triboulet, R ^e  

^a UNIVERSITY OF RZESZÓW   (Poland)

^b INFN LABORATORI NAZIONALI DI FRASCATI   (Italy)

^c JAGIELLONIAN UNIVERSITY   (Poland)

^d LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^e Centre National de la Recherche Scientifique   (France)

^f ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DOPING (ADDITIVES); INFRARED SPECTROSCOPY; SENSITIVITY ANALYSIS;

ADDITIONAL VIBRATIONAL MODES (AVMS); FAR INFRARED REFLECTIVITY; LATTICE DEFORMATIONS; SEMICONDUCTOR ALLOYS;

SEMICONDUCTOR MATERIALS;

EID: 41349121163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2902175     Document Type: Article

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